FDN86501LZ
FDN86501LZ is N-Channel MOSFET manufactured by onsemi.
MOSFET
- N-Channel, Shielded Gate, POWERTRENCH)
60 V, 2.6 A, 116 m W
General Description This N- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for r DS(on), switching performance and ruggedness.
Features
- Shielded Gate MOSFET Technology
- Max r DS(on) = 116 m W at VGS = 10 V, ID = 2.6 A
- Max r DS(on) = 173 m W at VGS = 4.5 V, ID = 2.1 A
- High Performance Trench Technology for Extremely Low r DS(on)
- High Power and Current Handling Capability in a Widely Used
Surface Mount Package
- Fast Switching Speed
- 100% UIL Tested
- This Device is Pb- Free, Halide Free and is Ro HS pliant
Applications
- Primary DC- DC Switch
- Load Switch
MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Continuous (Note 1a)
Pulsed (Note 4)
±20
EAS Single Pulse Avalanche Energy (Note 3) PD Power Dissipation (Note 1a)
(Note 1b)
6 m...
