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FDN86501LZ N-Channel MOSFET

FDN86501LZ Description

MOSFET * N-Channel, Shielded Gate, POWERTRENCH) 60 V, 2.6 A, 116 mW FDN86501LZ General .
This N. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.

FDN86501LZ Features

* Shielded Gate MOSFET Technology
* Max rDS(on) = 116 mW at VGS = 10 V, ID = 2.6 A
* Max rDS(on) = 173 mW at VGS = 4.5 V, ID = 2.1 A
* High Performance Trench Technology for Extremely Low rDS(on)
* High Power and Current Handling Capability in a Widely Used Su

FDN86501LZ Applications

* Primary DC
* DC Switch
* Load Switch MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Continuous (Note 1a) Pulsed (Note 4) 60 V ±20 V 2.6 A 24 EAS Single Pulse A

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N-Channel MOSFET ON Semiconductor
ON Semiconductor FDN86501LZ-like datasheet