FDN86501LZ mosfet equivalent, n-channel mosfet.
* Shielded Gate MOSFET Technology
* Max rDS(on) = 116 mW at VGS = 10 V, ID = 2.6 A
* Max rDS(on) = 173 mW at VGS = 4.5 V, ID = 2.1 A
* High Performance Tr.
* Primary DC−DC Switch
* Load Switch
MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted)
Symbol
Parame.
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.
Features
* Shielded Gate MOSFET Technolog.
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